共 13 条
- [11] SHERRINGTON D, 1968, P INT C METALNONMETA
- [12] WAGNER RJ, 1966, B AM PHYS SOC, V11, P828
- [13] WAGNER RJ, 1967, THESIS NORTHWESTERN
FREQUENCY-DEPENDENT DIELECTRIC FUNCTION OF A ZERO-GAP SEMICONDUCTOR
被引：50
作者：
SHERRINGTON, D
KOHN, W
机构：
[1] Department of Physics, University of California, San Diego, San Diego
[2] Department of Theoretical Physics, University of Manchester, Manchester
关键词：
D O I：
10.1103/PhysRevLett.21.153
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The frequency-dependent dielectric function ε(ω) of an inherently zero-gap semiconductor, such as grey tin, has unusual properties at low temperatures. In undoped samples ε(ω)∼ω-12; in doped samples interband effects considerably modify the coefficient of the additional ω-2 term from its free-carrier value, the sign being reversed for p-type impurities. These properties should be observable in reflectance measurements. © 1968 The American Physical Society.
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页码：153 / 155
页数：3
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