PHOTOLUMINESCENCE AND RECOMBINATION OF EXCESS CARRIERS IN AMORPHOUS HYDROGENATED SILICON

被引：8

作者：

ANDREEV, AA

ZHERZDEV, AV

KOSAREV, AI

KOUGIA, KV

SHLIMAK, IS

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 127卷 / 01期

关键词：

D O I：

10.1002/pssb.2221270127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：273 / 278

页数：6

共 10 条

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[8] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].

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[9] RECOMBINATION IN PLASMA-DEPOSITED AMORPHOUS SI-H - LUMINESCENCE DECAY [J].

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[10] PHOTOCONDUCTIVITY, TRAPPING, AND RECOMBINATION IN DISCHARGE-PRODUCED, HYDROGENATED AMORPHOUS-SILICON [J].

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