LUMINESCENCE AND PHOTOCONDUCTIVITY CAUSED BY ANTISITE DEFECTS IN CDIN2S4 SINGLE-CRYSTALS

被引：2

作者：

GEORGOBIANI, AN ^{[1
]}

GRUZINTSEV, AN ^{[1
]}

RATSEEV, SA ^{[1
]}

TEZLEVAN, VE ^{[1
]}

TIGINYANU, IM ^{[1
]}

URSAKI, VV ^{[1
]}

机构：

[1] ACAD SCI MOSSR,INST APPL PHYS,KISHINEV,MOLDAVIA,USSR

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 02期

关键词：

D O I：

10.1002/crat.2170210218

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：259 / 263

页数：5

共 12 条

[1]

ANNEDA A, 1978, PHYS STATUS SOLIDI A, V50, P643

[2]

Czaja W., 1970, Physik der Kondensierten Materie, V10, P299, DOI 10.1007/BF02422849

[3] PHOTOLUMINESCENCE OF CDIN2S4 AND MIXED CRYSTALS WITH IN2S3 AS RELATED TO THEIR STRUCTURAL PROPERTIES [J].

CZAJA, W ;

KRAUSBAUER, L .

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[4]

Georgobiani A. N., 1985, FIZ TEKH POLUPROV, V19, P193

[5] PHOTOCONDUCTIVITY AND NON-EQUILIBRIUM CARRIER RECOMBINATION IN CDIN2S4 SINGLE-CRYSTALS [J].

GEORGOBIANI, AN ;

GRUZINTSEV, AN ;

ILYUKHINA, ZP ;

TEZLEVAN, VE ;

TIGINYANU, IM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (01) :207-212

[6]

GEORGOBIANI AN, 1984, PN LEBEDEV PHYS I, P25

[7] PHOTO-LUMINESCENCE OF CDIN2S4 SINGLE-CRYSTALS - RECOMBINATION PROCESS AND LOCALIZED LEVELS [J].

GRILLI, E ;

GUZZI, M ;

CAPPELLETTI, P ;

MOSKALONOV, AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (02) :755-765

[8] PHOTO-LUMINESCENCE OF CDLN2S4 SINGLE-CRYSTALS - INVESTIGATION OF THE NATURE OF THE RECOMBINATION CENTERS [J].

GRILLI, E ;

GUZZI, M ;

MOSKALONOV, AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02) :515-522

[9]

NAKANISHI H, 1981, JPN J APPL PHYS, V20, P1481, DOI 10.1143/JJAP.20.1481

[10] FUNDAMENTAL ABSORPTION-EDGE IN CDIN2S4 [J].

NAKANISHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :103-108

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