STRUCTURE OF SILICON-CARBIDE SYNTHESIZED IN DIAMOND AND SILICON BY ION-IMPLANTATION

被引：19

作者：

AKIMCHENKO, IP ^{[1
]}

KISSELEVA, KV ^{[1
]}

KRASNOPEVTSEV, VV ^{[1
]}

MILYUTIN, YV ^{[1
]}

TOURYANSKY, AG ^{[1
]}

VAVILOV, VS ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW,USSR

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1977年 / 33卷 / 02期

关键词：

D O I：

10.1080/00337577708237470

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：75 / 80

页数：6

共 15 条

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[2] AKIMCHENKO IP, 1975, INT C ION IMPLANTATI
[3] AKIMCHENKO IP, 1974, INT C ION IMPLANTATI
[4] BARANOVA EK, 1971, DOKL AKAD NAUK SSSR+, V200, P869
[5] BELYI IM, 1974, 6 M PHYS INT CHARG P
[6] BOKYI GB, 1971, CRYSTALS CHEMISTRY
[7] FORMATION OF SIC IN SILICON BY ION IMPLANTATION
BORDERS, JA
PICRAUX, ST
BEEZHOLD, W
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 509 - &
[8] Brack K., 1973, Crystal Lattice Defects, V4, P109
[9] PHONON DISPERSION CURVES BY RAMAN SCATTERING IN SIC POLYTYPES 3C,4H,6H,15R,AND 21R
FELDMAN, DW
PARKER, JH
CHOYKE, WJ
PATRICK, L
[J]. PHYSICAL REVIEW, 1968, 173 (03): : 787 - &
[10] Gerasimenko N. N., 1974, MIKROELEKTRONIKA, V3, P467