NONLINEARITY DIFFERENCE IN THE 2 PASSBANDS OF A DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASER AMPLIFIER

被引：7

作者：

HUI, RQ

SAPIA, A

机构：

[1] Fondazione Ugo Bordoni, Rome, 00144

[2] Beijing University of Posts and Telecommunications, Beijing

来源：

OPTICS LETTERS | 1990年 / 15卷 / 17期

关键词：

D O I：

10.1364/OL.15.000956

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The nonlinearity difference in the two passbands of a distributed-feedback semiconductor laser amplifier was studied experimentally. A theoretical explanation was given by using the transmission matrix approach. The difference of nonlinearity in the two passbands was found to be enhanced greatly by the mechanism of asymmetric facet reflection. © 1990 Optical Society of America.

引用

页码：956 / 958

页数：3

共 5 条

[1] OPTICAL BISTABILITY IN DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASER AMPLIFIERS [J].