INFLUENCE OF PIEZOELECTRIC FIELDS ON RYDBERG ENERGIES IN (GA,IN)AS-GAAS SINGLE QUANTUM-WELLS EMBEDDED IN P-I-N STRUCTURES

被引：9

作者：

BIGENWALD, P

GIL, B

BORING, P

机构：

[1] Université de Montpellier II, Groupe d'Etudes des Semiconducteurs, 34095 Montpellier Cedex 5

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.9122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed a variational calculation of the heavy-hole exciton for (Ga,In)As-GaAs strained-layer quantum wells embedded in p-i-n structures. The calculation has been made for sample growth along both the (001) and (111) directions. We show that the influence of the piezoelectric field may sometimes lead to strong orientation-dependent properties. In particular, when piezoelectric fields are present, the radiative lifetimes of heavy-hole excitons are strongly dependent on the thickness of the (Ga,In)As layer.

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页码：9122 / 9125

页数：4

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