A 180-STAGE INTEGRATED THIN-FILM SCAN GENERATOR

[1] FORMATION OF THIN FILM CIRCUITS USING PREFERENTIAL NUCLEATION [J]. SOLID-STATE ELECTRONICS, 1965, 8 (05) : 479 - &

[2] GRAY S, 1959, RCA REV, V20, P413

[3] Hass B. G., 1964, PHYS THIN FILMS, V2, P147

[4] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[5] A TIN OXIDE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (09) : 701 - 702

[6] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[7] SHALLCROSS FV, 1963, RCA REV, V24, P676

[8] THUN R, 1964, PHYSICS THIN FILM ED, V2, P147

[9] WEIMER PK, 1963, RCA REV, V24, P661

[10] INTEGRATED CIRCUITS INCORPORATING THIN-FILM ACTIVE + PASSIVE ELEMENTS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1479 - &

[1] FORMATION OF THIN FILM CIRCUITS USING PREFERENTIAL NUCLEATION [J]. SOLID-STATE ELECTRONICS, 1965, 8 (05) : 479 - &

[2] GRAY S, 1959, RCA REV, V20, P413

[3] Hass B. G., 1964, PHYS THIN FILMS, V2, P147

[4] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[5] A TIN OXIDE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (09) : 701 - 702

[6] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[7] SHALLCROSS FV, 1963, RCA REV, V24, P676

[8] THUN R, 1964, PHYSICS THIN FILM ED, V2, P147

[9] WEIMER PK, 1963, RCA REV, V24, P661

[10] INTEGRATED CIRCUITS INCORPORATING THIN-FILM ACTIVE + PASSIVE ELEMENTS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1479 - &