EFFECT OF LATTICE MISMATCH ON THE SOLIDUS COMPOSITIONS OF GAXIN1-XP LIQUID-PHASE EPITAXIAL CRYSTALS

被引：25

作者：

OHTA, J

ISHIKAWA, M

ITO, R

OGASAWARA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 03期

关键词：

GALLIUM INDIUM PHOSPHIDE;

D O I：

10.1143/JJAP.22.L136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Liquid phase epitaxy of Ga//xIn//1// minus //xP on (100-oriented GaAs and GaAs//0//. //8P//0//. //2 substrates has been studied. Results indicate that the solidus compositions of Ga//xIn//1// minus //xP both substrates tend to be ″locked near the lattice matching composition. This ″composition pulling effect is shown to be consistent with a model that takes account of the contribution of lattice mismatch strain energy.

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页码：L136 / L138

页数：3

相关论文

共 13 条

[1]

BENEKING H, 1975, I PHYS C SER, V24, P113

[2] COMPOSITION STUDIES OF MBE GALNP ALLOYS BY RUTHERFORD SCATTERING AND X-RAY-DIFFRACTION [J].

BLOOD, P ;

BYE, KL ;

ROBERTS, JS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1790-1797

[3]

COLEMAN JJ, 1975, IEEE J QUANTUM ELECT, VQE11, P471, DOI 10.1109/JQE.1975.1068650

[4]

HAKKI BW, 1971, J ELECTROCHEM SOC, V117, P1469

[5] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J].

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

CAMPBELL, JC .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :154-165

[6] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[7] ORIENTATION DEPENDENCE OF LPE GROWTH-BEHAVIOR OF GAXIN1-XP ON (100) AND (111)B GAAS SUBSTRATES [J].

KUME, M ;

OHTA, J ;

OGASAWARA, N ;

ITO, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (07) :L424-L426

[8] SURFACE DECOMPOSITION OF GAAS SUBSTRATES IN LPE GROWTH OF INGAASP AND ITS EFFECT ON CRYSTAL QUALITY [J].

MUKAI, S ;

YAJIMA, H ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :1001-1002

[9] LPE GROWTH OF IN1-XGAXP1-ZASZ (Z LESS THAN OR EQUAL TO 0.01) ON (1 0 0) GAAS SUBSTRATES AND ITS LATTICE-CONSTANTS AND PHOTO-LUMINESCENCE [J].

MUKAI, S ;

MATSUZAKI, M ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :321-327

[10] LIQUID-PHASE EPITAXY OF ALYGA1-YAS1-XSBX AND IMPORTANCE OF STRAIN EFFECTS NEAR MISCIBILITY GAP [J].

NAHORY, RE ;

POLLACK, MA ;

BEEBE, ED ;

DEWINTER, JC ;

ILEGEMS, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1053-1058