ANNEALING OF ION-IMPLANTED RESISTORS REDUCES THE 1/F NOISE

被引：72

作者：

VANDAMME, LKJ ^{[1
]}

OOSTERHOFF, S ^{[1
]}

机构：

[1] TWENTE UNIV TECHNOL,DEPT ELECT ENGN,ENSCHEDE,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.336897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3169 / 3174

页数：6

共 21 条

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