PHOTO-LUMINESCENCE PROCESSES OF ZN-DOPED IN1-XGAXP WITH 0.6-LESS-THAN-X-LESS-THAN-1.0

被引:7
作者
KATO, T
MATSUMOTO, T
ISHIDA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 01期
关键词
D O I
10.1143/JJAP.21.100
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:100 / 103
页数:4
相关论文
共 26 条
[1]  
Alferov Zh. I., 1974, Soviet Physics - Semiconductors, V7, P1534
[2]  
ALFEROV ZI, 1977, SOV PHYS SEMICOND+, V11, P1371
[3]   PHOTOLUMINESCENCE OF UNDOPED GAXIN1-XP ALLOYS [J].
CHEVALLIER, J ;
LAUGIER, A .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02) :437-+
[4]   RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].
CRAFORD, MG ;
SHAW, RW ;
HERZOG, AH ;
GROVES, WO .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&
[5]   EXCITON LOCALIZATION AT IMPURITY PAIRS IN ZINC TELLURIDE AND INDIUM-PHOSPHIDE [J].
DEAN, PJ ;
WHITE, AM .
SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1351-1355
[6]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[7]   OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].
DEAN, PJ ;
FAULKNER, RA ;
KIMURA, S ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1971, 4 (06) :1926-&
[8]   OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
FROSCH, CJ ;
HENRY, CH .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&
[9]   INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].
DEAN, PJ ;
KAMINSKY, G ;
ZETTERSTROM, RB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+
[10]  
GARBUZOV DZ, 1974, SOV PHYS SEMICOND+, V8, P270