LINEAR COMPOSITE MOSFETS (COMFETS)

被引：7

作者：

CHENG, MCH

TOUMAZOU, C

机构：

[1] Department of Electrical Engineering, Imperial College of Science, Technology and Medicine, London SW7 2BT, Exhibition Road

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 20期

关键词：

CIRCUIT THEORY AND DESIGN; METAL-OXIDE-SEMICONDUCTOR DEVICES;

D O I：

10.1049/el:19911120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOS linear circuit design remains a challenging task due to the nonlinear characteristics of the MOSFET. A generalised method of designing MOS linear circuits making use of linear composite MOSFET (COMFET) circuit structures as versatile basic circuit building blocks is described. The COMFET is linear in its composite-drain current and in its composite-source current with respect to its composite-gate-source voltage, assuming the square-law saturated drain current characteristic of the MOSFET.

引用

页码：1802 / 1804

页数：3

共 10 条

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