PASSIVATION OF RECOMBINATION CENTERS IN WSE2 BY PHOTOELECTROCHEMICAL ETCHING

被引：8

作者：

TENNE, R

SPAHNI, W

CALZAFERRI, G

WOLD, A

机构：

[1] UNIV BERN,INST CHEM,CH-3000 BERN,SWITZERLAND

[2] BROWN UNIV,DEPT CHEM,PROVIDENCE,RI 02912

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1985年 / 189卷 / 02期

关键词：

D O I：

10.1016/0368-1874(85)80071-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

SOLAR CELLS

引用

页码：247 / 256

页数：10

共 21 条

[1] INFLUENCE OF CRYSTAL-SURFACE ORIENTATION ON REDOX REACTIONS AT SEMICONDUCTING MOS2 [J].

AHMED, SM ;

GERISCHER, H .

ELECTROCHIMICA ACTA, 1979, 24 (06) :705-711

[2]

Conway B. E., 1952, ELECTROCHEMICAL DATA

[3]

GARUTHARA R, PHYS REV B

[4] THE ROLE OF SEMICONDUCTOR STRUCTURE AND SURFACE-PROPERTIES IN PHOTO-ELECTROCHEMICAL PROCESSES [J].

GERISCHER, H .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 150 (1-2) :553-569

[5] POLYCRYSTALLINE WSE2 PHOTO-ELECTRODES [J].

GINLEY, DS ;

BIEFELD, RM ;

PARKINSON, BA ;

KEUNGKAM, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) :145-148

[6] REACTIVITY OF WATER IN THE OXIDATION OF NORMAL-TYPE MOSE2 SINGLE-CRYSTAL ELECTRODES [J].

KAUTEK, W ;

GERISCHER, H .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1982, 137 (02) :239-245

[7] ANISOTROPIC PHOTOCORROSION OF N-TYPE MOS2, MOSE2, AND WSE2 SINGLE-CRYSTAL SURFACES - THE ROLE OF CLEAVAGE STEPS, LINE AND SCREW DISLOCATIONS [J].

KAUTEK, W ;

GERISCHER, H .

SURFACE SCIENCE, 1982, 119 (01) :46-60

[8]

KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010

[9] EFFICIENT AND STABLE PHOTOELECTROCHEMICAL CELLS CONSTRUCTED WITH WSE2 AND MOSE2 PHOTOANODES [J].

KLINE, G ;

KAM, K ;

CANFIELD, D ;

PARKINSON, BA .

SOLAR ENERGY MATERIALS, 1981, 4 (03) :301-308

[10] RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND SOLAR CONVERSION EFFICIENCY OF WSE2 PHOTOANODES [J].

LEWERENZ, HJ ;

HELLER, A ;

DISALVO, FJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (06) :1877-1880

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