THE ROLE OF SEMICONDUCTOR STRUCTURE AND SURFACE-PROPERTIES IN PHOTO-ELECTROCHEMICAL PROCESSES

被引：81

作者：

GERISCHER, H

机构：

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1983年 / 150卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0728(83)80235-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：553 / 569

页数：17

共 25 条

[1] THE TRANSPORT AND KINETICS OF MINORITY-CARRIERS IN ILLUMINATED SEMICONDUCTOR ELECTRODES [J].

ALBERY, WJ ;

BARTLETT, PN ;

HAMNETT, A ;

DAREEDWARDS, MP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1492-1501

[2] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].

BARD, AJ ;

BOCARSLY, AB ;

FAN, FRF ;

WALTON, EG ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677

[3] ON THE KINETICS OF SEMICONDUCTOR-ELECTRODE STABILIZATION [J].

CARDON, F ;

GOMES, WP ;

VANDENKERCHOVE, F ;

VANMAEKELBERGH, D ;

VANOVERMEIRE, F .

FARADAY DISCUSSIONS, 1980, 70 :153-164

[4] INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .1. [J].

FRESE, KW ;

MADOU, MJ ;

MORRISON, SR .

JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (24) :3172-3178

[5] STABILITY OF SEMICONDUCTOR ELECTRODES AGAINST PHOTODECOMPOSITION [J].

GERISCHER, H .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1977, 82 (1-2) :133-143

[6] ELECTROLYTIC DECOMPOSITION AND PHOTO-DECOMPOSITION OF COMPOUND SEMICONDUCTORS IN CONTACT WITH ELECTROLYTES [J].

GERISCHER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1422-1428

[7] THE INFLUENCE OF CRYSTALLOGRAPHIC ANISOTROPY ON PHOTOCURRENTS AT GASE-ELECTRODES [J].

GERISCHER, H ;

LUBKE, M .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1981, 85 (08) :709-713

[8] THE PHOTOELECTROCHEMISTRY OF GALLIUM SELENIDE [J].

GERISCHER, H ;

GOBRECHT, J ;

TURNER, J .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (06) :596-601

[9]

GERISCHER H, BER BUNSENGES PHYS C

[10] FORMATION OF AN INVERSION LAYER IN N-TYPE MOSE2 ELECTRODES - OBSERVATION IN THE PRESENCE OF HIGHLY OXIDIZING REDOX SYSTEMS [J].

JAEGER, CD ;

GERISCHER, H ;

KAUTEK, W .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1982, 86 (01) :20-25

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