THE INFLUENCE OF CRYSTALLOGRAPHIC ANISOTROPY ON PHOTOCURRENTS AT GASE-ELECTRODES

被引：5

作者：

GERISCHER, H

LUBKE, M

机构：

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1981年 / 85卷 / 08期

关键词：

D O I：

10.1002/bbpc.19810850920

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：709 / 713

页数：5

共 11 条

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OVERHOF, H .

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[9] INFLUENCE OF STACKING DISORDER ON ELECTRONIC PROPERTIES OF LAYERED SEMICONDUCTORS [J].

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[10] ELECTRONIC-STRUCTURE OF GASE [J].

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