IMPACT IONIZATION AND QUANTUM EFFICIENCY IN INSB

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[2] QUANTUM EFFICIENCY IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1049 - &

[3] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &

[4] ELECTRON SCATTERING IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) : 131 - 149

[5] Heitler W., 1954, QUANTUM THEORY RAD

[6] IVAKHNO VN, 1965, FIZ TVERD TELA+, V6, P1651

[7] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[8] ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 219 - 223

[9] VANWELZENIS RG, 1981, APPL PHYS A-MATER, V26, P157, DOI 10.1007/BF00614750

[10] Ziman J. M., 1960, ELECT PHONONS

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[2] QUANTUM EFFICIENCY IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1049 - &

[3] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &

[4] ELECTRON SCATTERING IN INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) : 131 - 149

[5] Heitler W., 1954, QUANTUM THEORY RAD

[6] IVAKHNO VN, 1965, FIZ TVERD TELA+, V6, P1651

[7] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[8] ELECTRON IMPACT IONIZATION IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 219 - 223

[9] VANWELZENIS RG, 1981, APPL PHYS A-MATER, V26, P157, DOI 10.1007/BF00614750

[10] Ziman J. M., 1960, ELECT PHONONS