ONE-PHOTON ABSORPTION IN DIRECT GAP SEMICONDUCTORS

被引：12

作者：

VAIDYANATHAN, A

MITRA, SS

NARDUCCI, LM

SHATAS, RA

机构：

[1] UNIV RHODE ISLAND,DEPT PHYS,KINGSTON,RI 02881

[2] USA,MISSILE COMMAND,REDSTONE ARSENAL,AL 35809

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 05期

关键词：

D O I：

10.1016/0038-1098(77)91361-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：405 / 407

页数：3

共 14 条

[1]

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[2]

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FOSSUM, HJ ;

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[4] INFRARED ABSORPTION AND VALENCE BAND IN INDIUM ANTIMONIDE [J].

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[5] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

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[6]

KARTHEUSER E, 1972, POLARONS IONIC CRYST

[7]

KELDYSH LV, 1958, SOV PHYS JETP-USSR, V6, P763

[8]

LONG D, 1968, ENERGY BANDS SEMICON

[9] INFRARED ABSORPTION IN GALLIUM ARSENIDE [J].

MOSS, TS ;

HAWKINS, TDF .

INFRARED PHYSICS, 1961, 1 (02) :111-115

[10] ONE-PHOTON KELDYSH ABSORPTION IN DIRECT-GAP SEMICONDUCTORS [J].

NARDUCCI, LM ;

MITRA, SS ;

SHATAS, RA ;

PFEIFFER, PA ;

VAIDYANATHAN, A .

PHYSICAL REVIEW B, 1976, 14 (06) :2508-2513

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