A MODEL FOR SHIFTS IN GATE TURN-ON VOLTAGE OF INSULATED-GATE FIELD-EFFECT DEVICES INDUCED BY IONIZING RADIATION

被引：12

作者：

STANLEY, AG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 03期

关键词：

D O I：

10.1109/T-ED.1967.15913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：134 / +

页数：1

相关论文

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SPETH, AJ
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[2] EFFECTS OF ELECTRON IRRADIATION ON METAL-OXIDE SEMICONDUCTOR TRANSISTORS
STANLEY, AG
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[3] COMPARISON OF MOS AND METAL-NITRIDE-SEMICONDUCTOR INSULATED GATE FIELD-EFFECT TRANSISTORS UNDER ELECTRON IRRADIATION
STANLEY, AG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 248 - +
[4] EFFECT OF ELECTRON IRRADIATION ON N-CHANNEL MOS TRANSISTORS
STANLEY, AG
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2150 - &
[5] STANLEY AG, 1966, P IEEE, V54, P881
[6] SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS
THOMAS, JE
YOUNG, DR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 368 - +