MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS

被引：17

作者：

GONZALEZ, FN ^{[1
]}

NEUGROSCHEL, A ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 04期

关键词：

D O I：

10.1109/T-ED.1984.21542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：413 / 416

页数：4

共 9 条

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[3] DETERMINATION OF LIFETIMES AND RECOMBINATION CURRENTS IN P-N-JUNCTION SOLAR-CELLS, DIODES, AND TRANSISTORS [J].

NEUGROSCHEL, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :108-115

[4] EMITTER CURRENT SUPPRESSION IN A HIGH-LOW-JUNCTION EMITTER SOLAR-CELL USING AN OXIDE-CHARGE-INDUCED ELECTRON ACCUMULATION LAYER [J].

NEUGROSCHEL, A ;

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PAO, SC ;

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[5]

NEUGROSCHEL A, 1978, IEEE T ELECTRON DEVI, V25, P285

[6] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J].

NING, TH ;

ISAAC, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2051-2055

[7]

ROSENZWEIG W, 1962, BELL SYST TECH J, V41, P1573

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

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BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[9]

SMITH RA, 1978, SEMICONDUCTORS, P283

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