IMPLANTATION TEMPERATURE-DEPENDENCE OF DISORDER PRODUCED BY 40 KEV N+ ION IRRADIATION OF SILICON

被引：2

作者：

ALHASHMI, SAR

CARTER, G

机构：

来源：

RADIATION EFFECTS LETTERS | 1985年 / 85卷 / 06期

关键词：

D O I：

10.1080/01422448508209701

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：265 / 271

页数：7

共 10 条

[1]

ABREYON IA, 1977, SOV PHYS SEMICOND, V11

[2]

AHMED NAG, 1979, PHYSICS LETT A, V69

[3]

CSEPREGI L, 1976, APPL PHYS LETT, V29

[4]

DENNIS JR, 1978, J APPL PHYS, V49

[5]

Gashtold V.N., 1975, SOV PHYS SEMICOND, V9, P554

[6] PRODUCTION AND BEAM ANNEALING OF DAMAGE IN CARBON IMPLANTED SILICON .2. [J].

KOOL, WH ;

ROOSENDAAL, HE ;

WIGGERS, LW ;

SARIS, FW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :41-48

[7] ANOMALOUS SURFACE DAMAGE IN ION BOMBARDED SILICON FROM CHANNELING-BACKSCATTERING MEASUREMENTS [J].

THOMPSON, DA ;

CARTER, G ;

HAUGEN, HK ;

STEVANOVIC, DV .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 46 (1-2) :71-77

[8]

TITOV AI, 1980, NUCL INSTR METH, V168, P283

[9]

WIGGERS LW, 1978, THESIS AMSTERDAM

[10] DETERMINATION OF OPTIMUM DEPTH-RESOLUTION CONDITIONS FOR RUTHERFORD BACKSCATTERING ANALYSIS [J].

WILLIAMS, JS ;

MOLLER, W .

NUCLEAR INSTRUMENTS & METHODS, 1978, 157 (02) :213-221

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