N-SUBSTITUTIONAL AND P-SUBSTITUTIONAL DOPING OF RF-SPUTTERED A-SIC-H

被引：5

作者：

PEREIRA, JMT

BANERJEE, PK

MITRA, SS

机构：

[1] Univ of Rhode Island, Dep of, Electrical Engineering, Kingston,, RI, USA, Univ of Rhode Island, Dep of Electrical Engineering, Kingston, RI, USA

来源：

THIN SOLID FILMS | 1985年 / 127卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(85)90203-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SILICON CARBIDE

引用

页码：337 / 350

页数：14

共 27 条

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