NEW EMISSION-LINE IN HIGHLY EXCITED GAN

[1] Benoit C., 1969, PHYS REV, V177, P567

[2] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1211 - +

[3] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 175 - &

[4] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (01) : 5 - +

[5] EXCITON INTERACTION IN PHOTOLUMINESCENCE FROM ZNO [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 63 (02): : 511 - 517

[6] EXCITON-EXCITON INTERACTION IN CDS, CDSE, AND ZNO [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (16) : 890 - &

[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[8] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 676 - 681

[9] Pankove J. I., 1973, Journal of Luminescence, V7, P114, DOI 10.1016/0022-2313(73)90062-8

[1] Benoit C., 1969, PHYS REV, V177, P567

[2] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1211 - +

[3] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 175 - &

[4] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (01) : 5 - +

[5] EXCITON INTERACTION IN PHOTOLUMINESCENCE FROM ZNO [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 63 (02): : 511 - 517

[6] EXCITON-EXCITON INTERACTION IN CDS, CDSE, AND ZNO [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (16) : 890 - &

[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[8] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 676 - 681

[9] Pankove J. I., 1973, Journal of Luminescence, V7, P114, DOI 10.1016/0022-2313(73)90062-8