LPE GAAS AS AN X-RAY-DETECTOR FOR ASTRONOMY

被引：9

作者：

SUMNER, TJ ^{[1
]}

GRANT, SM ^{[1
]}

ALEXIEV, D ^{[1
]}

BUTCHER, KSA ^{[1
]}

机构：

[1] AUSTRALIAN NUCL SCI & TECHNOL ORG,MENAI,NSW 2234,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 348卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(94)90792-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Gallium arsenide detectors offer an attractive alternative to silicon for high energy X-ray (> 10 keV) astrophysics. Thick (130 mum) detectors fabricated from GaAs grown using the liquid phase epitaxy (LPE) process are now achieving an energy resolution which is approaching that needed in astrophysics. At the same time progress continues to be made in the field of true imaging optics at these high energies using multi-layer reflective surfaces and it is now not unreasonable to imagine a hard X-ray astrophysics mission with grazing incidence optics and a GaAs solid state position sensitive spectrometer in the focal plane. A brief introduction to hard X-ray astrophysics and optics is given. Results obtained with an LPE GaAs device are presented including both detector performance and the electrical characteristics. At room temperature a resolution of approximately 2.8 keV HWHM was achieved.

引用

页码：518 / 521

页数：4

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