A SIMPLE CHEMICAL VAPOR-DEPOSITION METHOD FOR DEPOSITING THIN TIO2 FILMS

被引:186
作者
YEUNG, KS
LAM, YW
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D O I
10.1016/0040-6090(83)90136-0
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:169 / 178
页数:10
相关论文
共 9 条
[1]   TITANIUM-DIOXIDE DIELECTRIC FILMS PREPARED BY VAPOR REACTION [J].
FEUERSANGER, AE .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1463-&
[2]   TIO2 FILM PROPERTIES AS A FUNCTION OF PROCESSING TEMPERATURE [J].
FITZGIBBONS, ET ;
SLADEK, KJ ;
HARTWIG, WH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :735-+
[3]   SILICON-SILICON DIOXIDE SYSTEM [J].
GRAY, PV .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1543-+
[4]  
GROVE AS, 1967, PHYS TECHNOL S, pCH9
[5]  
HASS G, 1952, VACUUM, V2, P331
[7]  
KOLTHOFF IM, 1959, TREATISE ANAL CHEM 2, V5, P8
[8]  
Lam Y. W., 1981, Hong Kong Engineer, V9, P31
[9]   LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].
NICOLLIAN, EH ;
GOETZBERGER, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :108-+