ELASTIC-SCATTERING IN BALLISTIC-ELECTRON-EMISSION-MICROSCOPY STUDIES OF THE EPITAXIAL NISI2/SI(111) INTERFACE

被引：14

作者：

FERNANDEZ, A ^{[1
]}

HALLEN, HD ^{[1
]}

HUANG, T ^{[1
]}

BUHRMAN, RA ^{[1
]}

SILCOX, J ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.44.3428

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated epitaxial NiSi2 films on Si(111) under ultrahigh-vacuum conditions and conducted in situ ballistic-electron-emission-microscopy (BEEM) measurements on this coherent interface system. We demonstrate the sensitivity of BEEM to mechanisms which broaden the angular distribution of the injected electrons for transport through a Si(111) interface. Spatially localized increases in ballistic transmission rates are observed, attributable to the clastic scattering of the injected electrons by structural defects present on the surface or buried in the silicide film.

引用

页码：3428 / 3431

页数：4

共 9 条

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