NEGATIVE-RESISTANCE OF SEMICONDUCTOR HETEROJUNCTION DIODES OWING TO TRANSMISSION RESONANCE

被引:5
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ZOHTA, Y
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10.1063/1.334339
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O59 [应用物理学];
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页码:2334 / 2336
页数:3
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共 8 条
[1]  
BOHM D, 1951, QUANTUM THEORY 3
[2]   MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J].
FRIJLINK, PM ;
MALUENDA, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L574-L576
[3]  
LANDAU LD, 1977, QUANTUM MECHANICS, pCH7
[4]  
LANDAU LD, 1977, QUANTUM MECHANICS NO, pCH3
[5]  
Messiah A, 1961, QUANTUM MECHANICS, VI
[6]   BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].
SHUR, MS ;
EASTMAN, LF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683
[7]   HIGH-ENERGY (VISIBLE-RED) STIMULATED-EMISSION IN GAAS [J].
VOJAK, BA ;
LAIDIG, WD ;
HOLONYAK, N ;
CAMRAS, MD ;
COLEMAN, JJ ;
DAPKUS, PD .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :621-626
[8]   INFLUENCE OF TRANSMISSION RESONANCE ON CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR DIODES INCLUDING A QUANTUM WELL [J].
ZOHTA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L531-L533