INFLUENCE OF TRANSMISSION RESONANCE ON CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR DIODES INCLUDING A QUANTUM WELL

被引：7

作者：

ZOHTA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L531 / L533

页数：3

共 14 条

[1]

BOHM D, 1951, QUANTUM THEORY 3

[2] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[3]

DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[4] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].

ESAKI, L ;

CHANG, LL .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498

[5] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[6] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :90-92

[7]

LANDAU LD, 1977, QUANTUM MECHANICS, pCH7

[8]

LANDAU LD, 1977, QUANTUM MECHANICS NO, pCH3

[9]

Messiah A, 1961, QUANTUM MECHANICS, VI

[10] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

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