ELECTROLUMINESCENCE STUDY OF RESONANT-TUNNELING IN GAAS-ALAS SUPERLATTICES

被引：6

作者：

KLANN, R

GRAHN, HT

PLOOG, K

机构：

[1] Paul-Drude-Institut für Festkörperelektronik, D-10117 Berlin

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.50.11037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electroluminescence (EL) emission from GaAs-AlAs superlattices embedded in a p(+)-i-n(+) diode structure under forward bias. The occupation of higher subbands by sequential resonant tunneling between adjacent wells is demonstrated via interband emission. We observed emission lines due to transitions involving the second and third conduction subband as well as the third heavy-hole subband. The EL lines originating from higher subbands exhibit nearly a constant Stark shift indicating inhomogeneous electric field and carrier density distributions.

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页码：11037 / 11044

页数：8

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