ELECTROLUMINESCENCE RECOMBINATION FROM EXCITED-STATE CARRIER POPULATIONS IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES

被引：27

作者：

COCKBURN, JW ^{[1
]}

BUCKLE, PD ^{[1
]}

SKOLNICK, MS ^{[1
]}

WHITTAKER, DM ^{[1
]}

TAGG, WIE ^{[1
]}

HOGG, RA ^{[1
]}

GREY, R ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SCI & ENGN RES COUNCIL,CENT FACIL III V MAT,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13757

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electroluminescence recombination arising from electrons in both the n=1 and n=2 confined levels (E1 and E2) of the quantum well of a GaAs-Al0.4Ga0.6As p-n junction double-barrier resonant-tunneling structure is reported, At the E2 resonance, study of the relative intensities of the E2 to E1 electroluminescence permits a quantitative determination of the relative populations (1:300) of the two levels. From this the ratio of the E1 tunneling time to the intersubband scattering time is deduced. Despite the small population of E2, we show that a significant fraction of the on-resonance current still arises from tunneling through this state.

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收藏

页码：13757 / 13760

页数：4

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