INVERTED BISTABILITY IN THE CURRENT-VOLTAGE CHARACTERISTICS OF A RESONANT TUNNELING DEVICE

被引：20

作者：

LEADBEATER, ML ^{[1
]}

EAVES, L ^{[1
]}

HENINI, M ^{[1
]}

HUGHES, OH ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECT & ELECTR ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90258-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1467 / 1471

页数：5

共 12 条

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[2]

BASTARD G, 1989, P INT C QUANTUM WELL

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HUGHES, OH ;

HENINI, M ;

ALVES, ES ;

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[6] HIGH-DENSITY FEMTOSECOND EXCITATION OF NONTHERMAL CARRIER DISTRIBUTIONS IN INTRINSIC AND MODULATION DOPED GAAS QUANTUM WELLS [J].

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[7] CHARGE BUILDUP AND INTRINSIC BISTABILITY IN AN ASYMMETRIC RESONANT-TUNNELING STRUCTURE [J].

LEADBEATER, ML ;

ALVES, ES ;

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SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) :1060-1062

[8] MAGNETIC-FIELD AND CAPACITANCE STUDIES OF INTRINSIC BISTABILITY IN DOUBLE-BARRIER STRUCTURES [J].

LEADBEATER, ML ;

ALVES, ES ;

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[9]

SHEARD FW, 1989, 3RD INT C PHON PHYS

[10] MAGNETO-TUNNELING STUDIES OF CHARGE BUILDUP IN DOUBLE BARRIER DIODES [J].

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SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (02) :219-222

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