SIMILARITIES IN CHEMICAL INTERMIXING AT THE CU/INP AND CU/SI INTERFACES

被引：30

作者：

KENDELEWICZ, T

ROSSI, G

PETRO, WG

BABALOLA, IA

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：564 / 569

页数：6

共 15 条

[11] NATURE OF THE VALENCE STATES IN SILICON TRANSITION-METAL INTERFACES
ROSSI, G
ABBATI, I
BRAICOVICH, L
LINDAU, I
SPICER, WE
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 195 - 198
[12] THE SI(111)/CU INTERFACE STUDIED WITH SURFACE SENSITIVE TECHNIQUES
ROSSI, G
KENDELEWICZ, T
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 987 - 990
[13] ROSSI G, PHYS REV B
[14] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE
ROTH, JA
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324
[15] THE SCHOTTKY-BARRIER PROBLEM
WILLIAMS, RH
[J]. CONTEMPORARY PHYSICS, 1982, 23 (04) : 329 - 351