TIGHT-BINDING STUDY OF THE SILICON SELF-INTERSTITIAL IN TETRAHEDRAL SITE

被引：5

作者：

PECHEUR, P

TOUSSAINT, G

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 47卷 / 06期

关键词：

D O I：

10.1016/0038-1098(83)91078-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 [凝聚态物理];

摘要：

引用

页码：507 / 508

页数：2

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