CHARGING, LONG-TERM STABILITY AND TSD MEASUREMENTS OF SIO2 ELECTRETS

被引：27

作者：

GUNTHER, P

机构：

来源：

IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1989年 / 24卷 / 03期

关键词：

D O I：

10.1109/14.30886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：439 / 442

页数：4

共 13 条

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