TEMPERATURE-DEPENDENCE OF LONG WAVELENGTH SEMICONDUCTOR-LASERS

We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, lambda = 1.3-mu-m. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines laser diode performance at elevated temperatures.