SEMICONDUCTOR SURFACE ETCHING BY HALOGENS - FUNDAMENTAL STEPS

[1] LASER-INDUCED GAS-SURFACE INTERACTIONS [J]. SURFACE SCIENCE REPORTS, 1983, 3 (01) : 1 - 105

[2] LOCAL-STRUCTURE OF ADSORBATES ON SEMICONDUCTOR SURFACES USING SEXAFS - A BRIEF SUMMARY [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 205 - 211

[3] CHEMISORPTIVE EMISSION AND LUMINESCENCE .2. ELECTRON AND ION EMISSION FROM CHLORINE AND BROMINE REACTIONS WITH YTTRIUM, TITANIUM, ZIRCONIUM AND HAFNIUM SURFACES [J]. SURFACE SCIENCE, 1983, 129 (2-3) : 399 - 418

[4] ADSORPTION-DESORPTION STUDIES USING ESD OF CCL2F2, C2H2F2 AND C2F6 ON TUNGSTEN [J]. SURFACE SCIENCE, 1985, 160 (02) : 362 - 378

[5] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[6] ERTL G, 1974, LOW ENERGY ELECTRONS

[7] ETCHING AND FILM FORMATION IN CF3BR PLASMAS - SOME QUALITATIVE OBSERVATIONS AND THEIR GENERAL IMPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1341 - 1347

[8] CHLORINE REACTIONS ON SI (111) SURFACE [J]. SURFACE SCIENCE, 1969, 18 (02) : 398 - &

[9] STUDIES OF ADSORPTION AND ELECTRON-INDUCED DISSOCIATION OF FE(CO)5 ON SI(100) [J]. SURFACE SCIENCE, 1986, 171 (01) : 197 - 207

[10] X-RAY STANDING WAVE FLUORESCENCE MEASUREMENTS IN ULTRAHIGH-VACUUM - ADSORPTION OF BR ON SI(111)-(1X1) [J]. SOLID STATE COMMUNICATIONS, 1985, 54 (11) : 921 - 923

[1] LASER-INDUCED GAS-SURFACE INTERACTIONS [J]. SURFACE SCIENCE REPORTS, 1983, 3 (01) : 1 - 105

[2] LOCAL-STRUCTURE OF ADSORBATES ON SEMICONDUCTOR SURFACES USING SEXAFS - A BRIEF SUMMARY [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 205 - 211

[3] CHEMISORPTIVE EMISSION AND LUMINESCENCE .2. ELECTRON AND ION EMISSION FROM CHLORINE AND BROMINE REACTIONS WITH YTTRIUM, TITANIUM, ZIRCONIUM AND HAFNIUM SURFACES [J]. SURFACE SCIENCE, 1983, 129 (2-3) : 399 - 418

[4] ADSORPTION-DESORPTION STUDIES USING ESD OF CCL2F2, C2H2F2 AND C2F6 ON TUNGSTEN [J]. SURFACE SCIENCE, 1985, 160 (02) : 362 - 378

[5] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[6] ERTL G, 1974, LOW ENERGY ELECTRONS

[7] ETCHING AND FILM FORMATION IN CF3BR PLASMAS - SOME QUALITATIVE OBSERVATIONS AND THEIR GENERAL IMPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1341 - 1347

[8] CHLORINE REACTIONS ON SI (111) SURFACE [J]. SURFACE SCIENCE, 1969, 18 (02) : 398 - &

[9] STUDIES OF ADSORPTION AND ELECTRON-INDUCED DISSOCIATION OF FE(CO)5 ON SI(100) [J]. SURFACE SCIENCE, 1986, 171 (01) : 197 - 207

[10] X-RAY STANDING WAVE FLUORESCENCE MEASUREMENTS IN ULTRAHIGH-VACUUM - ADSORPTION OF BR ON SI(111)-(1X1) [J]. SOLID STATE COMMUNICATIONS, 1985, 54 (11) : 921 - 923