INVESTIGATION OF CARBON INCORPORATION IN ZNSE - EFFECTS ON MORPHOLOGY, ELECTRICAL, AND PHOTOLUMINESCENCE PROPERTIES

被引:16
作者
GIAPIS, KP
JENSEN, KF
POTTS, JE
PACHUTA, SJ
机构
[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
[2] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455
[3] THREE M CO,2011N35 3M CTR,ST PAUL,MN 55144
关键词
impurity characterization; impurity incorporation; Metalorganic chemical vapor deposition;
D O I
10.1007/BF02658006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Observations of carbon incorporation in epitaxial ZnSe films grown by metalorganic chemical vapor deposition are presented. Carbon is detected by secondary ion mass spectroscopy (SIMS) measurements in all ZnSe films grown from methylallylselenide and dimethylzinc. The presence of carbon in the films is correlated with a new bound excitonic emission appearing at 2.7920 eV which dominates the near-band-edge low-temperature photoluminescence spectra of all carbon contaminated films. This peak is also observed when growth is commenced from diethylselenide, under certain growth conditions, but not from hydrogen selenide. The effect of the carbon contamination is discussed in terms of variations in surface morphology, electrical and luminescence properties of as-grown films. Control of the carbon concentration is demonstrated by alternating between hydrogen selenide and methylallylselenide during growth. Strategies to avoid carbon contamination in ZnSe are also proposed. © 1990 The Mineral, Metal & Materials Society, Inc.
引用
收藏
页码:453 / 462
页数:10
相关论文
共 41 条