A NEW-TYPE OF SCHOTTKY TUNNEL TRANSISTOR

被引：10

作者：

KIMURA, M

MATSUDATE, T

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Tohoku-Gakuin University, Tagajo, Miyagi Pref. 985, 1-13

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 10期

关键词：

Charge carriers - Circuit theory - Gates (transistor) - Leakage currents - MOS devices - Semiconductor device structures - Transistors - ULSI circuits;

D O I：

10.1109/55.320985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n(+)-accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold voltage in cathode current I-k vs. cathode voltage V-k curves. Theoretical calculations based on Stratton's tunneling theory are carried out and have trends similar to the experimental results.

引用

页码：412 / 414

页数：3

共 4 条

[1] A NEW TYPE OF TUNNEL-EFFECT TRANSISTOR EMPLOYING INTERNAL FIELD-EMISSION OF SCHOTTKY-BARRIER JUNCTION
HATTORI, R
NAKAE, A
SHIRAFUJI, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B): : L1467 - L1469
[2] NUMERICAL-SIMULATION OF TUNNEL EFFECT TRANSISTORS EMPLOYING INTERNAL FIELD-EMISSION OF SCHOTTKY-BARRIER JUNCTION
HATTORI, R
SHIRAFUJI, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 612 - 618
[3] SUB-HALF-MICROMETER CONCAVE MOSFET WITH DOUBLE LDD STRUCTURE
HIEDA, K
SUNOUCHI, K
TAKATO, H
NITAYAM, A
HORIGUCHI, F
MASUOKA, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) : 671 - 676
[4] Stratton R., 1969, Tunneling phenomena in solids, P105

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