SUB-HALF-MICROMETER CONCAVE MOSFET WITH DOUBLE LDD STRUCTURE

被引:19
作者
HIEDA, K
SUNOUCHI, K
TAKATO, H
NITAYAM, A
HORIGUCHI, F
MASUOKA, F
机构
[1] ULSI Research Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210, 1, Komukai
关键词
D O I
10.1109/16.123493
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new concave MOSFET, named Double Lightly doped drain Concave (DLC), has been developed for sub-half-micrometer MOSFET's which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n(-)-p(-)-p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFET's.
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页码:671 / 676
页数:6
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