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NEW SHORT CHANNEL MOSFET STRUCTURE (UMOST)
被引:19
作者
:
SALAMA, CAT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
SALAMA, CAT
[
1
]
机构
:
[1]
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
来源
:
SOLID-STATE ELECTRONICS
|
1977年
/ 20卷
/ 12期
关键词
:
D O I
:
10.1016/0038-1101(77)90211-8
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1003 / 1009
页数:7
相关论文
共 12 条
[1]
Crawford R.H., 1967, MOSFET CIRCUIT DESIG, P68
[2]
DESIGN AND CHARACTERISTICS OF N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS
[J].
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
CRITCHLOW, DL
;
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
;
SCHUSTER, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
SCHUSTER, SE
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1973,
17
(05)
:430
-442
[3]
THERMAL OXIDATION OF HEAVILY DOPED SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(04)
:430
-+
[4]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
[J].
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
;
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
;
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
;
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
;
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
;
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
:256
-268
[5]
VMOS - NEW MOS INTEGRATED-CIRCUIT TECHNOLOGY
[J].
HOLMES, FE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA
UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA
HOLMES, FE
;
SALAMA, CAT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA
UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA
SALAMA, CAT
.
SOLID-STATE ELECTRONICS,
1974,
17
(08)
:791
-+
[6]
ANISOTROPIC ETCHING OF SILICON
[J].
LEE, DB
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Laboratories, General Electric Company Limited, Hirst Research Centre, Wembley
LEE, DB
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
:4569
-&
[7]
ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS
[J].
LEE, HS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
LEE, HS
.
SOLID-STATE ELECTRONICS,
1973,
16
(12)
:1407
-1417
[8]
ELECTROCHEMICALL THINNED N/N+ EPITAXIAL SILICON - METHOD AND APPLICATIONS
[J].
MEEK, RL
论文数:
0
引用数:
0
h-index:
0
MEEK, RL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(07)
:1240
-+
[9]
HIGH-SPEED LOGIC LSI USING DIFFUSION SELF-ALIGNED ENHANCEMENT DEPLETION MOS IC
[J].
OHTA, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
OHTA, K
;
MORIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
MORIMOTO, M
;
SAITOH, M
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
SAITOH, M
;
FUKUDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
FUKUDA, T
;
MORINO, A
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
MORINO, A
;
SHIMIZU, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
SHIMIZU, K
;
HAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
HAYASHI, Y
;
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
TARUI, Y
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
10
(05)
:314
-321
[10]
VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC
[J].
RODGERS, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
RODGERS, TJ
;
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
MEINDL, JD
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
:239
-250
←
1
2
→
共 12 条
[1]
Crawford R.H., 1967, MOSFET CIRCUIT DESIG, P68
[2]
DESIGN AND CHARACTERISTICS OF N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS
[J].
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
CRITCHLOW, DL
;
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
;
SCHUSTER, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
SCHUSTER, SE
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1973,
17
(05)
:430
-442
[3]
THERMAL OXIDATION OF HEAVILY DOPED SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(04)
:430
-+
[4]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
[J].
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
;
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
;
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
;
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
;
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
;
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
:256
-268
[5]
VMOS - NEW MOS INTEGRATED-CIRCUIT TECHNOLOGY
[J].
HOLMES, FE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA
UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA
HOLMES, FE
;
SALAMA, CAT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA
UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA
SALAMA, CAT
.
SOLID-STATE ELECTRONICS,
1974,
17
(08)
:791
-+
[6]
ANISOTROPIC ETCHING OF SILICON
[J].
LEE, DB
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Laboratories, General Electric Company Limited, Hirst Research Centre, Wembley
LEE, DB
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
:4569
-&
[7]
ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS
[J].
LEE, HS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
LEE, HS
.
SOLID-STATE ELECTRONICS,
1973,
16
(12)
:1407
-1417
[8]
ELECTROCHEMICALL THINNED N/N+ EPITAXIAL SILICON - METHOD AND APPLICATIONS
[J].
MEEK, RL
论文数:
0
引用数:
0
h-index:
0
MEEK, RL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(07)
:1240
-+
[9]
HIGH-SPEED LOGIC LSI USING DIFFUSION SELF-ALIGNED ENHANCEMENT DEPLETION MOS IC
[J].
OHTA, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
OHTA, K
;
MORIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
MORIMOTO, M
;
SAITOH, M
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
SAITOH, M
;
FUKUDA, T
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
FUKUDA, T
;
MORINO, A
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
MORINO, A
;
SHIMIZU, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
SHIMIZU, K
;
HAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
HAYASHI, Y
;
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TOKYO,JAPAN
TARUI, Y
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
10
(05)
:314
-321
[10]
VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC
[J].
RODGERS, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
RODGERS, TJ
;
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
MEINDL, JD
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
:239
-250
←
1
2
→