NEW SHORT CHANNEL MOSFET STRUCTURE (UMOST)

被引:19
作者
SALAMA, CAT [1 ]
机构
[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
关键词
D O I
10.1016/0038-1101(77)90211-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1003 / 1009
页数:7
相关论文
共 12 条
[1]  
Crawford R.H., 1967, MOSFET CIRCUIT DESIG, P68
[2]   DESIGN AND CHARACTERISTICS OF N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].
CRITCHLOW, DL ;
DENNARD, RH ;
SCHUSTER, SE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (05) :430-442
[3]   THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].
DEAL, BE ;
SKLAR, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :430-+
[4]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[5]   VMOS - NEW MOS INTEGRATED-CIRCUIT TECHNOLOGY [J].
HOLMES, FE ;
SALAMA, CAT .
SOLID-STATE ELECTRONICS, 1974, 17 (08) :791-+
[6]   ANISOTROPIC ETCHING OF SILICON [J].
LEE, DB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4569-&
[7]   ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS [J].
LEE, HS .
SOLID-STATE ELECTRONICS, 1973, 16 (12) :1407-1417
[9]   HIGH-SPEED LOGIC LSI USING DIFFUSION SELF-ALIGNED ENHANCEMENT DEPLETION MOS IC [J].
OHTA, K ;
MORIMOTO, M ;
SAITOH, M ;
FUKUDA, T ;
MORINO, A ;
SHIMIZU, K ;
HAYASHI, Y ;
TARUI, Y .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) :314-321
[10]   VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC [J].
RODGERS, TJ ;
MEINDL, JD .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :239-250