HIGH-SPEED LOGIC LSI USING DIFFUSION SELF-ALIGNED ENHANCEMENT DEPLETION MOS IC

被引：15

作者：

OHTA, K

MORIMOTO, M

SAITOH, M

FUKUDA, T

MORINO, A

SHIMIZU, K

HAYASHI, Y

TARUI, Y

机构：

[1] ELECTROTECH LAB,TOKYO,JAPAN

[2] NIPPON ELECT CO LTD,IC DIV,FUNDAMENTAL TECHNOL SECT,TOKYO,JAPAN

[3] NIPPON ELECT CO LTD,IC DIV,IST IC DESIGN ENGN DEPT,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1109/JSSC.1975.1050617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：314 / 321

页数：8

共 9 条

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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
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MEINDL, JD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 239 - 250
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[6] TARUI Y, 1970, DEC INT EL DEV M
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