VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC

[1] BERGER HH, 1972, IEEE J SOLID STATE C, VSC 7, P340

[2] BOLEKY EJ, 1972, IEEE J SOLID CIRCUIT, VSC 7, P135

[3] BROERS AN, 1973, SEMICONDUCTOR SILICO, P830

[4] COOK PW, 1973, IEEE J SOLID-ST CIRC, VSC 8, P348

[5] DENNARD RH, 1972, IEEE INT ELECTRON DE

[6] DETROYE NC, 1974, INT SOLID STATE CIRC, P12

[7] DUTTON RW, PRIVATE COMMUNICATIO

[8] EVANS WJ, 1973, IEEE J SOLID STATE C, VSC 8, P373

[9] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[10] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[1] BERGER HH, 1972, IEEE J SOLID STATE C, VSC 7, P340

[2] BOLEKY EJ, 1972, IEEE J SOLID CIRCUIT, VSC 7, P135

[3] BROERS AN, 1973, SEMICONDUCTOR SILICO, P830

[4] COOK PW, 1973, IEEE J SOLID-ST CIRC, VSC 8, P348

[5] DENNARD RH, 1972, IEEE INT ELECTRON DE

[6] DETROYE NC, 1974, INT SOLID STATE CIRC, P12

[7] DUTTON RW, PRIVATE COMMUNICATIO

[8] EVANS WJ, 1973, IEEE J SOLID STATE C, VSC 8, P373

[9] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[10] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +