VMOS - NEW MOS INTEGRATED-CIRCUIT TECHNOLOGY

被引：19

作者：

HOLMES, FE ^{[1
]}

SALAMA, CAT ^{[1
]}

机构：

[1] UNIV TORONTO, DEPT ELECTR ENGN, TORONTO M5S 1A4, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 08期

关键词：

D O I：

10.1016/0038-1101(74)90026-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：791 / +

页数：1

共 14 条

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[6] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J].

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GROVE, AS .

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[8] V GROOVE MOS-TRANSISTOR TECHNOLOGY [J].

HOLMES, FE ;

SALAMA, CAT .

ELECTRONICS LETTERS, 1973, 9 (19) :457-458

[9]

KARP JA, 1972, IEEE SOLID ST CIRC C

[10] ANISOTROPIC ETCHING OF SILICON [J].

LEE, DB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4569-&

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