ANALYSIS OF CONCAVE MOSFET

被引：26

作者：

NATORI, K

SASAKI, I

MASUOKA, F

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1978.19106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：448 / 456

页数：9

共 10 条

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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) : 314 - 321
[6] Poon H. C., 1973, 1973 International Electron Devices Meeting Technical Digest, P156, DOI 10.1109/IEDM.1973.188673
[7] DEVICE DESIGN CONSIDERATIONS FOR ION-IMPLANTED N-CHANNEL MOSFETS
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1975, 19 (01) : 50 - 59
[8] VMOS ROM
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