REALIZATION OF AN INSB BISTABLE DEVICE AS AN OPTICAL AND GATE AND ITS USE TO MEASURE CARRIER RECOMBINATION TIMES

被引：44

作者：

SEATON, CT

SMITH, SD

TOOLEY, FAP

PRISE, ME

TAGHIZADEH, MR

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.93870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：131 / 133

页数：3

共 10 条

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[4]

HILL JR, UNPUB OPTIC COMMUN

[5] DYNAMIC NON-LINEAR OPTICAL PROCESSES IN SEMICONDUCTORS [J].

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[6] OPTICAL BISTABILITY IN SEMICONDUCTORS [J].

MILLER, DAB ;

SMITH, SD ;

SEATON, CT .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (03) :312-317

[7] BAND-GAP-RESONANT NON-LINEAR REFRACTION IN III-V SEMICONDUCTORS [J].

MILLER, DAB ;

SEATON, CT ;

PRISE, ME ;

SMITH, SD .

PHYSICAL REVIEW LETTERS, 1981, 47 (03) :197-200

[8] OPTICAL BISTABILITY AND SIGNAL AMPLIFICATION IN A SEMICONDUCTOR CRYSTAL - APPLICATIONS OF NEW LOW-POWER NON-LINEAR EFFECTS IN INSB [J].

MILLER, DAB ;

SMITH, SD ;

JOHNSTON, A .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :658-660

[9]

SEATON CT, 1982, THESIS HERIOT WATT U

[10]

STARNG S, 1982, APPL PHYS LETT, V40, P205

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