PROPOSED DISCRIMINATION BETWEEN 1/F NOISE SOURCE IN TRANSISTORS

被引:34
作者
VANDERZIEL, A
机构
关键词
D O I
10.1016/0038-1101(82)90045-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:141 / 143
页数:3
相关论文
共 11 条
[1]  
FONGER W, 1956, TRANSISTORS I
[2]   DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J].
HOOGE, FN .
PHYSICA, 1972, 60 (01) :130-+
[3]   1-F NOISE [J].
HOOGE, FN .
PHYSICA B & C, 1976, 83 (01) :14-23
[4]   SURFACE STATE RELATED 1/F NOISE IN P!N JUNCTIONS [J].
HSU, ST .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :843-+
[5]   SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J].
HSU, ST ;
FITZGERALD, DJ ;
GROVE, AS .
APPLIED PHYSICS LETTERS, 1968, 12 (09) :287-+
[6]  
KLAASSEN FM, 1967, PHILIPS RES REP, V22, P505
[7]   1-F NOISE IN THERMO EMF OF INTRINSIC AND EXTRINSIC SEMICONDUCTORS [J].
KLEINPENNING, TG .
PHYSICA, 1974, 77 (01) :78-98
[8]   1-F NOISE IN P-N DIODES [J].
KLEINPENNING, TGM .
PHYSICA B & C, 1980, 98 (04) :289-299
[9]   1-F NOISE IN SOLID-STATE SINGLE INJECTION DIODES [J].
KLEINPENNING, TGM .
PHYSICA B & C, 1978, 94 (02) :141-151
[10]  
PLUMB JL, 1964, IEEE T ED, V10, P304