EFFECT OF IONIZED CENTERS ON ELECTRON DRIFT VELOCITY IN CDTE

被引：7

作者：

CANALI, C

NAVA, F

OTTAVIANI, G

ZANIO, K

机构：

[1] UNIV MODENA, IST FIS, MODENA, ITALY

[2] HUGHES RES LABS, MALIBU, CA USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1975年 / 28卷 / 02期

关键词：

D O I：

10.1002/pssa.2210280224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：581 / 590

页数：10

共 29 条

[1]

ALBERIGIQUARANT.A, 1971, NUOVO CIMENTO, V1, P447

[2] MONTE-CARLO CALCULATIONS ON ELECTRON-TRANSPORT IN CDTE1) [J].

BORSARI, V ;

JACOBONI, C .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 54 (02) :649-663

[3] EFFECT OF SCATTERING AND TRAPPING BY IONIZED CENTERS ON ELECTRON DRIFT VELOCITY IN CDTE [J].

CANALI, C ;

NAVA, F ;

OTTAVIANI, G ;

ZANIO, K .

SOLID STATE COMMUNICATIONS, 1973, 13 (08) :1255-1259

[4] TRANSPORT PROPERTIES OF CDTE [J].

CANALI, C ;

MARTINI, M ;

OTTAVIANI, G ;

ZANIO, KR .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :422-+

[5] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[6]

de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361

[7] FIELD-ENHANCED IONIZATION [J].

DUSSEL, GA ;

BOER, KW .

PHYSICA STATUS SOLIDI, 1970, 39 (02) :375-&

[8] ELECTRIC FIELD EFFECTS IN TRAPPING PROCESSES [J].

DUSSEL, GA ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2797-&

[9] GUNN EFFECT IN POLAR SEMICONDUCTORS [J].

FOYT, AG ;

MCWHORTER, AL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :79-+

[10]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

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