FAR INFRARED CHARACTERIZATION OF HG1-XCDXTE AND RELATED ELECTRONIC MATERIALS

被引:5
作者
PERKOWITZ, S
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D O I
10.1007/BF02654024
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:551 / 562
页数:12
相关论文
共 9 条
[1]   BORON ION-IMPLANTATION IN HG1-XCDXTE [J].
BAARS, J ;
HURRLE, A ;
ROTHEMUND, W ;
FRITZSCHE, CR ;
JAKOBUS, T .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1461-1466
[2]  
FURDYNA JK, 1983, P SOC PHOTO-OPT INST, V409, P43, DOI 10.1117/12.935735
[3]  
JENSEN B, 1983, INFRARED MILLIMETER, V8, P127
[4]   FAR INFRARED STUDIES OF LATTICE AND FREE CARRIER EFFECTS IN HG1-XMNXTE [J].
MCKNIGHT, SW ;
AMIRTHARAJ, PM ;
PERKOWITZ, S .
SOLID STATE COMMUNICATIONS, 1978, 25 (05) :357-361
[5]   FAR-INFRARED INTERBAND ABSORPTION IN HG1-XMNXTE [J].
MCKNIGHT, SW ;
AMIRTHARAJ, PM ;
PERKOWITZ, S .
INFRARED PHYSICS, 1978, 18 (5-6) :919-922
[6]   FAR-INFRARED STUDY OF FREE CARRIERS AND PLASMON-PHONON INTERACTION IN CDTE [J].
PERKOWIT.S ;
THORLAND, RH .
PHYSICAL REVIEW B, 1974, 9 (02) :545-550
[7]  
PERKOWITZ S, 1983, INFRARED MILLIMETER, V8, P71
[8]   FAR-INFRARED SPECTRUM OF CADMIUM TELLURIDE [J].
STAFSUDD, OM ;
HAAK, FA ;
RADISAVLJEVIC, K .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1967, 57 (12) :1475-+
[9]  
VODOPYANOV LK, 1982, SOV PHYS SEMICOND+, V16, P436