INTERFERENCE EFFECTS ON PHOTOREFLECTANCE LINE-SHAPES OF EXCITONS IN GAAS/ALAS SUPERLATTICES

被引：8

作者：

NAKAYAMA, M

TANAKA, I

DOGUCHI, T

NISHIMURA, H

机构：

[1] Department of Applied Physics, Osaka City University, Osaka, 558, Sugimoto, Sumiyoshi-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期

关键词：

Alas; Exciton; Gaas; Interference; Molecular-beam epitaxy; Photoreflectance; Reflectance; Superlattice;

D O I：

10.1143/JJAP.29.L1760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated photoreflectance and reflectance line shapes of heavy-hole and light-hole excitons with quantum number n=1 at 77 K in (GaAs)m/(AlAs)msuperlattices (m=35 and 53 monolayers) grown by molecular-beam epitaxy. The photoreflectance and reflectance line shapes of the superlattice with m=53 are fully reversed to those of the superlattice with m=35. It is demonstrated that the difference of the photoreflectance line shapes is due to a Fabry-Perot-type interference effect causing the difference of the reflectance line shapes. © 1990 IOP Publishing Ltd.

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收藏

页码：L1760 / L1762

页数：3

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