SIMULTANEOUS MOLECULAR-BEAM EPITAXY GROWTH AND SCANNING-TUNNELING-MICROSCOPY IMAGING DURING GE/SI EPITAXY

被引：166

作者：

VOIGTLANDER, B

ZINNER, A

机构：

[1] Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 22期

关键词：

D O I：

10.1063/1.110256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high temperature scanning tunneling microscope (STM) capable of simultaneous imaging and molecular beam epitaxy (MBE) growth at 600-900 K sample temperature is described. The formation of the two-dimensional Stranski-Krastanov layer and the evolution of three-dimensional islands during further growth of Ge on Si (111) was observed. An inversion of the aspect ratio of the islands with increasing coverage indicates a transition from coherent to dislocated 3D islands. This method (MBSTM) opens the possibility to follow MBE growth processes with STM in a real in situ way and gives access to the evolution of specific features during growth.

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页码：3055 / 3057

页数：3

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