BONDING AND SURFACE ELECTRONIC-STRUCTURE OF AN SB OVERLAYER ON GAP(110)

被引:29
作者
MANGHI, F
CALANDRA, C
MOLINARI, E
机构
[1] UNIV MODENA,CNR,GRP NAZL STRUTTURA MAT,I-41100 MODENA,ITALY
[2] CNR,IST ACUST OM CORBINO,I-00189 ROMA,ITALY
关键词
D O I
10.1016/S0039-6028(87)80369-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:449 / 462
页数:14
相关论文
共 13 条
[1]   ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110) [J].
BERTONI, CM ;
CALANDRA, C ;
MANGHI, F ;
MOLINARI, E .
PHYSICAL REVIEW B, 1983, 27 (02) :1251-1258
[2]   THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF THE GAP(110)-SI INTERFACE [J].
CALANDRA, C ;
MANGHI, F ;
BERTONI, CM .
SURFACE SCIENCE, 1985, 162 (1-3) :605-609
[3]   ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1979, 29 (03) :267-271
[4]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1982, 26 (02) :803-814
[5]  
LUTH H, COMMUNICATION
[6]   THE ADSORPTION AND ELECTRONIC-STRUCTURE OF ANTIMONY LAYERS ON CLEAN CLEAVED INDIUM PHOSPHIDE(110) SURFACES [J].
MAANI, C ;
MCKINLEY, A ;
WILLIAMS, RH .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (25) :4975-4986
[7]   SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - TOTAL-ENERGY MINIMIZATION AND SURFACE ELECTRONIC-STRUCTURE [J].
MAILHIOT, C ;
DUKE, CB ;
CHADI, DJ .
PHYSICAL REVIEW B, 1985, 31 (04) :2213-2229
[8]   THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF GAP(110) [J].
MANGHI, F ;
BERTONI, CM ;
CALANDRA, C ;
MOLINARI, E .
PHYSICAL REVIEW B, 1981, 24 (10) :6029-6042
[9]  
MARTENSSON P, 1986, PHYS REV B, V33, P7399, DOI 10.1103/PhysRevB.33.7399
[10]  
MATTERNKLOSSEN M, 1986, PHYS REV B, V33, P2259