ELECTRIC TUNING OF SEMICONDUCTOR-LASER USING ACOUSTOOPTIC DEVICE

被引：10

作者：

HIDAKA, T

NAKAMOTO, T

机构：

[1] Electrotechnical Lab, Japan

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 19期

关键词：

D O I：

10.1049/el:19890883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1320 / 1321

页数：2

共 7 条

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[2] SPECTRAL CHARACTERISTICS OF EXTERNAL-CAVITY CONTROLLED SEMICONDUCTOR-LASERS [J].

FLEMING, MW ;

MOORADIAN, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) :44-59

[3]

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[4] SINGLE-LONGITUDINAL-MODE OPERATION OF DFB-DC-PBH LD UNDER GBIT/S MODULATION [J].

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[5]

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[6] SINGLE-MODE OPERATION OF 1.3 MU-M INGAASP/INP BURIED CRESCENT LASERS USING A SHORT EXTERNAL OPTICAL CAVITY [J].

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MIKULYAK, RM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :223-229

[7] 10-KHZ LINEWIDTH 1.5 MU-M INGAASP EXTERNAL CAVITY LASER WITH 55-NM TUNING RANGE [J].

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DEVLIN, WJ .

ELECTRONICS LETTERS, 1983, 19 (03) :110-112

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